Graphene Raman Peaks to Strain & Doping

Enter the measured G and 2D peak positions from your graphene Raman spectrum to estimate strain and doping. (Assumes 532 nm laser excitation for baseline parameters)

G Peak Position (ω_G in cm^-1):

2D Peak Position (ω_2D in cm^-1):

Estimated Results:

Important Note on Calculations:

The calculations presented here are based on a simplified linear model using common empirical parameters for graphene's Raman G and 2D peak shifts with strain and doping. These parameters ($\omega_G^0$, $\omega_{2D}^0$, strain coefficients, doping coefficients) are approximate and can vary depending on the specific graphene sample, substrate, defect density, and exact laser excitation wavelength. This tool provides an estimate for guidance. For precise analysis, please consult detailed scientific literature and experimental data relevant to your specific graphene system. The calculated 'doping' refers to the carrier concentration magnitude; determining n-type vs. p-type doping often requires additional analysis (e.g., monitoring the G peak linewidth, or the direction of Fermi level shift).